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The vector gain of the closed secondary loop will be designated g02: it is the ratio of output c2 to input r2. The vector consists of a scalar gain Go2 and a phase angle c#+,~.

The most basic transistor is the bipolar NPN transistor (Fig. D.11), which consists of two pieces of N-doped silicon sandwiching a piece of P-doped silicon. N-doped silicon has a material added to it that causes electrons to be available in the crystal lattice. P-doped silicon has a material added that causes there to be an af nity for accepting electrons in the crystal lattice. Bipolar transistors actually are variable switches in which the amount of current passing through the collector and emitter can be controlled by controlling the amount of current passed through the base. Figure D.11 shows a simple circuit for an inverter. When current is passed through the base to the emitter, the collector will pass the amount current to the emitter de ned using the formula Ice = Ibe hFE

where Ice is the current through the collector and emitter, and Ibe is the current through the base and the emitter. hFE, which is also known as beta, is the multiplication factor for the current owing through the base and emitter to the collector and emitter. For a common transistor such as the 2N3904 (of which I use a few of in this book), hFE is in the range of 150 to 200. Along with the NPN bipolar transistor that is turned on when current is applied to it, there is the PNP bipolar transistor that will pass current between its collector and emitter when current is drawn from it. This device is shown in Fig. D.12 and behaves similarly to the NPN transistor, with the amount of current passing through the collector and emitter being proportional to the current being drawn from it. The most popular form of transistors used today are the metal oxide silicon eld effect transistor (MOSFET). These components are much smaller and use a fraction of the power of the bipolar transistors. The basic type of MOSFET transistor is the N-channel device that is shown in Fig. D.13. When a positive voltage is applied to the gate, an electrical eld is set up in the P-doped silicon substrate. This eld will

Symbol:

Power Switch Circuit:

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cause the electrical characteristics in the substrate below the gate (the conducting region in Fig. D.13) to mimic those of N-doped silicon. The size of the conducting region can be controlled by the amount of voltage applied to the gate. For digital applications, a set amount of voltage is applied constantly, making the N-channel behave like an on/off switch. MOSFETs usually are de ned by the resistance between the drain and the source when the transistor is on or conducting. For an N-channel device, this resistance normally is measured in fractions of an ohm. N-channel MOSFET transistors have a complementary device, the P-channel MOSFET. These transistors normally conduct when a zero voltage is applied to them because a conducting tub of N-doped silicon has been placed under the gate, as I ve shown in Fig. D.14. When a positive voltage is applied to the gate, the N-doped silicon changes its electrical characteristics to P-doped silicon and stops conducting.

Digital Inverter Circuit:

Symbol: Or:

Transistor Switch is Closed when a Positive Voltage is Applied to Gate Transistor Switch is. Open when a Zero or Negative Voltage is Applied to the Gate

Symbol: Or:

c2 go2 = T, = 1 EC&P + g,g,

CMOS Inverter Circuit:

Transistor Switch is Closed when a Zero or Negative Voltage is Applied to Gate .Transistor Switch is Open when a Positive Voltage is Applied to the Gate